NE6510179A-A參數(shù):HJ-FET GAAS 1.9GHZ 3W 79A
類別:分立半導(dǎo)體產(chǎn)品-RF FET產(chǎn)品變化通告: UPG,NE651SeriesObsolescence04/Feb/2013產(chǎn)品目錄繪圖: NEx5Series標(biāo)準(zhǔn)包裝:1系列:-包裝:散裝晶體管類型:HFET頻率:1.9GHz增益:10dB電壓-測試:3.5V額定電流:2.8A噪聲系數(shù):-電流-測試:200mA功率-輸出:32.5dBm電壓-額定:8V封裝:4-SMD,扁平引線供應(yīng)商器件封裝:79A